Semiconductor, memory card, and data processing system

ABSTRACT

Externally supplied program data is latched into data latch circuits DLL and DLR. A judgment is made as to whether or not the latched program data corresponds to any threshold value of multi-levels every time each of plural programing operations is carried out. The program control information corresponding to the judgment result is latched into a sense latch circuit SL. Based upon the latched program control information, the programing operation for setting threshold voltages having multi-levels to a memory cell is carried out in a stepwise manner. Even when the programing operation is ended, the externally supplied program data is left in the data latch circuit. Even when the programing operation of the memory cell is retried due to the overprograming condition, the program data is no longer required to be again received from the external device.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a continuation application of Ser. No. 10/211,342, filed Aug. 5,2002 U.S. Pat. No. 6,721,207, which is a continuation of applicationSer. No. 10/011,723, filed Dec. 11, 2001 U.S. Pat. No. 6,507,520, whichis a continuation of Ser. No. 09/539,633, filed Mar. 30, 2000 (now U.S.Pat. No. 6,233,174), which is a continuation application of Ser. No.09/250,157, filed on Feb. 16, 1999 (now U.S. Pat. No. 6,046,936), theentire disclosures of which are hereby incorporated by reference.

BACKGROUND OF THE INVENTION

The present invention is related to a semiconductor device having anon-volatile storage element capable of storing at least 4 values ofinformation (namely, 2 bits of information) into a single memory cell,for example, an electrically reprogramable non-volatile semiconductormemory device such as a flash memory, and furthermore, is related to atechnique effectively applicable to a data processing system such as afile memory system with using this non-volatile semiconductor memorydevice.

Conventionally, non-volatile semiconductor storage devices such as flashmemories have been proposed. These storage devices are capable ofstoring information by injecting and/or extracting electrons withrespect to floating gates. A flash memory owns a memory cell transistorhaving a floating gate, a control gate, a source, and a drain. In thismemory cell transistor, when electrons are injected into the floatinggate, a threshold voltage would be increased, whereas when electrons areextracted from the floating gate, the threshold voltage would bedecreased. The memory cell transistor may store therein information inresponse to the higher/lower threshold voltages with respect to a wordline voltage (namely, voltage applied to control gate) used to read outdata. Although not having restriction intentions, the lower thresholdvoltage condition of the memory cell transistor will be referred to asan “erasing state”, and the higher threshold voltage condition thereofwill be referred to as a “writing state” in this specification.

Among these flash memories, such a flash memory is available thatinformation having more than 4 values can be stored in a single memorytransistor. For example, such multi-level memories are described inJapanese Publication “NIKKEI MICRODEVICE” issued in November, 1994,pages 48 to 49, and further Japanese laid-opened Patent Application No.9-297996/1997 opened in 1997.

SUMMARY OF THE INVENTION

In a multi-level memory, for example, if a selection can be made of onestate from an erasing state and first to third writing states whosethreshold voltages are different from each other with respect to thiserasing state, then information having four values can be stored in asingle memory cell transistor. If an erasing operation is carried outbefore a writing operation, then information having four values can bestored by determining that all of the first to third writing states isnot selectable, or any one of the first to third programing states isselected. In this programing operation, such program control informationis required so as to determine as to whether or not the programingoperations are selected in order to separately obtain the firstprograming state through the third programing state. To save suchprogram control information, a sense latch circuit and a data latchcircuit, provided on each of bit lines, may be employed.

A sense latch circuit is constructed of, for example, a static latch.One end of each of bit lines is connected to a pair of input/outputterminals of this sense latch circuit, and a drain of theabove-described memory cell transistor is connected to each of these bitlines. Moreover, a data latch circuit is connected to the other end ofeach of bit lines. When either a readout voltage or a verify(verification) voltage is applied to a control gate of the memory celltransistor, the above-described sense latch circuit senses as to whetheror not a current may flow through the source-to-drain path. At thistime, the bit line provided on one operation non-selected side of thesense latch circuit is precharged to a reference level. Also, when datais written by forming a high potential difference between the controlgate of the memory cell transistor and the drain thereof, the drainvoltage is increased, or decreased every memory cell, so that it ispossible to discriminate the program selection to the memory cell fromthe program non-selection to the memory cell. In this case, the senselatch circuit latches the data in correspondence with the programselection, and the program non-selection. This latched data correspondsto the above-explained program control information.

Such program control information is produced via a data convertingcircuit every 2 bits of externally supplied program data, and then islatched by the sense latch circuit of the program-selected bit line andby each of the data latch circuits for the bit line pair which commonlyuse this sense latch circuit. In the case that the programing operationis carried out in unit of a word line, the program control informationis previously latched into the above-described sense latch circuit anddata latch circuit as to all of bit lines. Which commonly use the wordline.

In the programing operation, a decision is first made as to whether ornot the memory cell is brought into the first program state inaccordance with the program control information latched by the senselatch circuit. Next, another decision is made as to whether or not thememory cell is brought into the second program state in accordance withthe program control information which has been internally transferredfrom one data latch circuit to the sense latch circuit. Moreover, afurther decision is made as to whether or not the memory cell is broughtinto the third program state in accordance with the program controlinformation which has been internally transferred from the other datalatch circuit to the sense latch circuit. In this manner, theinformation having the four values specified by the 2-bit data can bestored into a single memory cell. In the above-explained programingoperations from the first programing state to the third programingstate, such a verify operation is carried out as to whether or not thethreshold voltage of the memory cell reaches the threshold voltageallocated to each of the first to third programing states.

At this time, there is such a memory cell which is brought into anoverprograming state among these memory cells with respect to each ofthe first to third programing states. In this memory cell, the thresholdvoltages under preceding/succeeding programing states cannot bediscriminated from each other. For instance, the threshold voltage ofthe memory cell of the first programing state becomes high, which cannotbe discriminated from the threshold voltage of the second programingstate. In such a case, in order to retry the programing operation fromthe beginning stage, after the erasing operation is carried out withrespect to the memory cell to be written, the above-explained programingoperation is retried.

However, when the programing operations from the first programing stateto the third programing state are once carried out, the program controlinformation which has been first latched into the sense latch circuitwould be overwritten by another program control information internallytransferred from the data latch circuit to thereby disappear. As aresult, when the reprograming operation is performed due to theoverprograming operation, the same program data must be again receivedfrom the external device. To this end, the control circuit foraccess-controlling the flash memory must save the program data in a workmemory or the like for the time being after the programing operation iscarried out with respect to the flash memory. Thus, the work load foraccess-controlling the flash memory would also be increased. TheInventors could reveal that this fact may lower the access efficiency ofthe flash memory, or the data processing efficiency.

Furthermore, in such a case that the programing operation itself willfinally fail due to the failure operation of the reprograming operationcaused by the overprograming operation, it is imaginable that theprogram data existed in this failure programing operation is stored intoanother storage area of this flash memory, or another flash memory.Similar to the previous case, the flash memory related to this failureprograming operation can no longer save the program data at this time.As a consequence, also in this failure case, the control circuit foraccess-controlling the flash memory must save the program data in a workmemory or the like for the time being after the programing operation forthis flash memory. Thus, this fact may lower the access efficiency ofthe flash memory, or the data processing efficiency.

An object of the present invention is to provide a semiconductor devicein which program data is not lost by a programing operation, and thisprogram data is externally supplied to a data latch circuit in order toprogram information having multi-levels to the respective memory cells.

Another object of the present invention is to provide a semiconductordevice which is no longer required to again receive the externallysupplied program data in such a case that a programing operation ofmulti-level information is retried with respect to a memory cell.

A further object of the present invention is to provide such asemiconductor device that when a programing operation is accomplishedunder abnormal condition, the program data which has been internallysaved at the end of this abnormal programing operation can be rewrittenby designating another memory address.

A still further object of the present invention is to provide asemiconductor device that when a programing operation is accomplishedunder abnormal condition, the program data related to the end of thisabnormal programing operation can be outputted outside thissemiconductor device.

The above-described objects and other objects, and also novel featuresof the present invention may be apparent from a detailed description ofthe present specification and the accompanying drawings.

The typically disclosed invention will now be summarized as follows:

-   [1] A semiconductor device, according to a first aspect of the    present invention, is featured by that in a semiconductor device    capable of storing information having multi-levels into a single    electrically erasable/programable non-volatile memory cell, in such    a case that an overprogram state of the memory cell is detected by    performing an overprogram detecting operation (either word disturb    detection or erratic detection) in connection with a programing    operation, even when the programing operation is retried by again    performing the erasing operation, internal saving of the program    data required for the programing operation can be guaranteed.

In other words, the semiconductor device is constituted by a sense latchcircuit having one pair of input/output terminals; bit lines provided incorrespondence with the respective input/output terminals of the senselatch circuit; a plurality of electrically erasable/programablenon-volatile memory cells selectively connected to the bit lines; a datalatch circuit coupled to each of the bit lines; input/output meanscapable of interfacing the data latch circuit with an external device;and control means for controlling data reading/erasing/programing.operations with respect to the memory cell. The control means causes thedata latch circuit to save externally supplied program data; producesprogram control information every time the data programing operation iscarried out; and causes the latch circuit to latch the produced programcontrol information for determining that the non-volatile memory cell isbrought into any state of different threshold voltages, the non-volatilememory cell being selected to be connected to the bit line based uponthe program data having plural bits saved in the data latch circuit.

In accordance with the above-explained control means, the externallysupplied program data is latched into the data latch circuits, and ajudgment is carried out as to whether or not the latched program datacorresponds to which threshold value of the multi-levels every time theprograming operation of the plural stages is performed. Then, theprogram control information control corresponding to this judgmentresult is latched into the sense latch circuit. In response to theprogram information latched in the sense latch circuit, the programingoperation for setting the threshold voltages of the multi-levels to thememory cell is carried out in a stepwise manner. As a consequence, evenwhen the programing operation is accomplished, the program data whichhas been originally and externally supplied is left in the data latchcircuits. Accordingly, even when the programing operation of themulti-levels information with respect to the memory cell is carried outagain based upon the detection result of the word disturb detectingoperation, or the detection result of the erratic detecting operation,the program data is no longer again accepted from the external devices.

To detect the overprograming state, the following method may beemployed. That is to say, the above-described control means furthermorejudges as to whether or not a threshold voltage which should be set to amemory cell is equal to a threshold voltage corresponding to such athreshold voltage to be checked by an overprogram detection every time averify reading operation required for the overprogram detection isperformed by calculating the data latched by the data latch circuit; thecontrol means causes the sense latch circuit to latch the judgmentresult; in the case that the judgment result data latched in the senselatch circuit means the corresponding threshold voltage, the controlmeans precharges the bit line; and the control means checks as towhether or not the precharge state of the bit line is changed by theverify reading operation to thereby detect the overprograming state.

The above-explained control means can retry the programing operationafter retrying the erasing operation when the overprograming state isdetected.

-   [2] The present invention, according to a second aspect, is directed    to a more concrete calculating/controlling means. The    calculating/controlling means according to the first aspect is    employed so as to latch the program information into the sense latch    circuit. In accordance with this second aspect, another    semiconductor device is conceived which is capable of storing    information having four values into a single electrically    erasable/programable non-volatile memory cell by controlling the    non-volatile memory cell to be brought into any one of an erasing    state, a first programing state, a second programing state, and a    third programing state, the threshold voltages of which are    different from each other. At this time, the control means causes    the data latch circuit to save externally supplied program data;    calculates program control information capable of determining that a    non-volatile memory cell selectively connected to the bit line is    brought into any one of the erasing state, the first programing    state; the second programing state, and the third state while using    2-bit program data as a unit, the 2-bit program data being saved by    two data latch circuits connected to the one pair of bit lines for    commonly using the sense latch circuit; causes the sense latch    circuit to latch the calculated control information every time a    programing operation is performed; and controls the first programing    state to the third programing state in accordance with the latched    programing control information.

Concretely speaking, when the sense latch circuit latches programcontrol information for setting as a first logic value, output data onthe side of a memory cell connection selecting bit line, the controlmeans causes the memory cell connected to the bit line set as the firstlogic value to execute the programing operation. The program controlinformation is calculated by the control means in such a manner thatwith respect to a first program data bit latched in the data latchcircuit provided on the side of one memory cell connection selecting bitline and also a second program data bit latched in the data latchcircuit provided on the side of the other memory cell connectionnon-selecting bit line, both the memory cell connection selecting bitlines commonly using the sense latch circuit, an OR gating operationbetween logically inverted data of the first program data bit and thesecond program data bit; another OR gating operation between the firstprogram data bit and the second program data bit; and another OR gatingoperation between the first program data bit and logically inverted dataof the second program data bit are carried out based upon the bit lineprecharge operation by the data latched in the data latch circuits andalso the sense operation by the sense latch circuit; and every time theprograming operation is performed, the control means causes the senselatch circuit to latch the OR-gated values sequentially acquired by saidOR-gating operations; and causes such a memory cell of the memory cellconnection selecting bit line in which the latched OR-gated valuebecomes the first logic value to perform the programing operation.

The above-described means for judging the overprograming state may berealized by the following more concrete example. The control meansfurthermore judges as to whether or not a threshold voltage which shouldbe set to a memory cell is equal to a threshold voltage corresponding tosuch a threshold voltage to be checked by an overprogram detection everytime a verify reading operation required for the overprogram detectiondue to the programing operation is performed by calculating the datalatched by the data latch circuit; the control means causes the senselatch circuit to latch the judgment result; in the case that thejudgment result data latched in the sense latch circuit means thecorresponding threshold voltage, the control means precharges the bitline; and the control means checks as to whether or not the prechargestate of the bit line is changed by the verify reading operation tothereby detect the overprograming state. The judging calculation isperformed by the control means in such a manner that with respect to afirst program data bit latched in the data latch circuit provided on theside of one memory cell connection selecting bit line and also a secondprogram data bit latched in the data latch circuit provided on the sideof the other memory cell connection non-selecting bit line, both thememory cell connection selecting bit lines commonly using the senselatch circuit, a negative logic OR gating operation between the firstprogram data bit and the second program data bit; an AND gatingoperation between the first program data bit and logically inverted dataof the second program data bit; and another AND gating operation betweenthe first program data bit and the second program data bit are carriedout based upon the bit line precharge operation by the data latched inthe data latch circuits and also the sense operation by the sense latchcircuit. Every time the overprograming detection operation is performed,the control means causes the sense latch circuit to latch as thejudgment result data the negative logic OR-gated value and the AND-gatedvalues sequentially acquired from the calculations; and when the senselatch circuit latches such judging result data that the output data onthe side of the memory cell connection selecting bit line is equal to asecond logic value, the control means precharges the memory cellconnection selecting bit line via the precharge circuit.

-   [3] Even when the programing operation fails, the program data at    this time is saved inside the semiconductor device by the above    means. While paying an attention to this fact, in the case that the    retry program command is accepted after the failure programing    operation has been accomplished, the control circuit can program the    program data already saved in the data latch circuits at the address    supplied in connection with this retry program command. Since the    semiconductor device owns such a retry function, the memory    controller, or the control apparatus for access-controlling this    semiconductor device changes either the program address or the    sector address with respect to the semiconductor device in which the    programing operation has failed, so that the memory controller, or    the control apparatus can perform the reprograming operation.

Also, after the programing operation has been accomplished underabnormal condition, the subject to be rewritten may be changed intoanother semiconductor device. In this case, when the control circuitreceives the recovery read command after the programing operation hasfailed, the control circuit outputs the program data saved in the datalatch circuits DLL and DLR via the input/output means to the externaldevice. Due to this recovery function, the control apparatus can readilyreprogram the same data into another semiconductor device other thansuch a semiconductor device where the programing operation has failed.This control apparatus access-controls either the memory controller ofthe memory card, or the memory card constituted by the plurality ofsemiconductor devices.

-   [4] The reprograming operation may be performed in such a manner    that after the erasing operation is carried out by the erase    command, the programing operation is performed with respect to the    same area by the program command. Such a reprograming process    operation may be realized by a single command, namely one reprogram    command. The above-described control means is operated as follows.    When the first reprogram command is supplied, the reprogram address    is fetched, and also the program data is fetched by the data latch    circuit. After the second reprogram command is supplied, the area    designated by the reprogram address is erased. Subsequently, the    programing operation is controlled based upon the data saved in the    data latch circuits. As a result, all of the data of a sector can be    rewritten by way of a single command.

Also, data reprograming for a portion of a sector may be realized by asingle command. That is to say, when a first reprogram command issupplied, the control means fetches a reprogram address and saves dataof the fetched address into the data latch circuit; the control meansdesignates a reprogram address within a range of the reprogram addressafter saving the data of the fetched address so as to latch the programdata into the data latch circuit; after a second reprogram command issupplied, the control means erases the program data of the sector areadesignated by the reprogram address; and subsequently, the control meanscontrols the programing operation based upon the data saved in the datalatch circuit and stored at the sector area designated by the reprogramaddress.

-   [5] In the case that a semiconductor device is utilized as a file    memory, while a management area is allocated to a sector of this    semiconductor device, the remaining portion thereof may be opened as    a user area. For example, information related to reprograming times    and failure/good sectors is stored into the management area. While    data is erased in unit of a sector by a user, such a command for    automatically setting the management area out of erasing operation    is supported. As a result, the semiconductor device and furthermore    the file memory can be made more convenient. In view of this point,    a partial erasing command may be supported. In other words, when a    first partial erasing command is supplied, the control means    acquires a sector address; next, when a second partial erasing    command is supplied, the control means saves data of a predetermined    area into a data latch circuit corresponding to the predetermined    area within an area designated by the sector address and also sets    data indicative of an erasing state to a data latch circuit    corresponding to other areas within the area designated by the    sector address; and furthermore, after the control means performs    the erasing operation with respect to the area designated by the    sector address, the control means executes the program control    operation in accordance with the data set to the data latch circuit.-   [6] A memory card may be realized by packaging on a card board, the    semiconductor device, a memory controller for access-controlling the    semiconductor device, and an external interface circuit connected to    the memory controller. Also, a data processing system may be    arranged by comprising the semiconductor device, a memory controller    for access-controlling the semiconductor device, and a processor for    controlling the memory controller.

While paying an attention to a retry programing command, a dataprocessing system may be arranged by comprising the semiconductordevice, and a control apparatus for outputting both a retry programcommand and a program address to the semiconductor-device when thecontrol apparatus detects that a programing operation by thesemiconductor device is accomplished under failure state. Also, whilepaying an attention to a recovery read command, a data processing systemis arranged by comprising the semiconductor device, and further acontrol apparatus for outputting a recovery read command to thesemiconductor device when the control apparatus detects that aprograming operation by the semiconductor device is accomplished underfailure state, and also for capturing program data outputted from thesemiconductor device to which the recovery read command is supplied, andfurther for controlling to program the fetched program data into anothersemiconductor device.

BRIEF DESCRIPTION OF THE INVENTION

FIG. 1 is a schematic block diagram for representing an overall flashmemory 1, according to a first embodiment of the present invention,capable of reading/programing 2 bits of information from/into a singlememory cell;

FIG. 2 illustratively indicates a device of an example of a memory celltransistor;

FIG. 3 is an explanatory diagram for showing an example of a command ofthe flash memory;

FIG. 4 is an explanatory diagram for indicating an example of acorresponding relationship between contents of the respective bits of astatus register and input/output terminals I/O0 to I/O7;

FIG. 5 illustratively represents an example of a connection relationshipamong a data latch circuit, a bit line, and a sense latch circuitcontained in a memory array;

FIG. 6 is a explanatory diagram for showing an example of acorresponding relationship between the data latch circuit and theinput/output terminals I/O4 and I/O0;

FIG. 7 illustratively shows as a threshold voltage distribution diagram,a relationship between 4 values of data and threshold voltages;

FIG. 8 is an explanatory diagram for showing an example of a programingvoltage condition and a sector batch-erasing condition;

FIG. 9 is an explanatory diagram for explicitly showing variousprograming modes in a 4-value programing process;

FIG. 10 is a circuit diagram for indicating an example of a structure ofthe flash memory, which mainly shows a sense latch circuit and a datalatch circuit;

FIG. 11 is a circuit diagram for showing an example of an AND typememory mat;

FIG. 12 is a circuit diagram for representing an example of a NOR typememory mat;

FIG. 13 is a circuit diagram for indicating an example of a DiNOR typememory mat;

FIG. 14 is a circuit diagram for showing an example of a NAND typememory mat;

FIG. 15 is a circuit diagram for representing an example of a HiCR typememory mat;

FIG. 16 is a flow chart for describing an example of a programingoperation designated by a first command (1FH) and a second command(40H);

FIG. 17 is an explanatory diagram for schematically showing a “01”programing process operation TS1;

FIG. 18 is an explanatory diagram for schematically showing a “00”programing process operation TS2;

FIG. 19 is an explanatory diagram for schematically showing a “10”programing process operation TS3;

FIG. 20 is an explanatory diagram for indicating an erratic/disturbdetecting process operation TS4;

FIG. 21 is an explanatory diagram for theoretically showing an exampleof a calculation content of a data latch processing operation;

FIG. 22 is an explanatory diagram for indicating a logic value of acalculation result with respect to logic values of data bits A and B inthe case that the calculation logic shown in FIG. 21 is employed;

FIG. 23 is a flow chart for describing a detailed content of the “01”programing process operation TS1;

FIG. 24 is a flow chart for describing a detailed content of the “10”erratic detecting process operation;

FIG. 25 is an explanatory diagram for indicating an example of a “01”program data latch processing operation by the multi-sense method;

FIG. 26 is an explanatory diagram for representing an example of a “00”program data latch processing operation by the multi-sense method;

FIG. 27 is an explanatory diagram for indicating an example of a “10”program data latch processing operation by the multi-sense method;

FIG. 28 is an explanatory diagram for representing an example of a “00”erratic detection data latch processing operation by the multi-sensemethod;

FIG. 29 is an explanatory diagram for indicating an example of a “10”erratic detection data latch processing operation by the multi-sensemethod;

FIG. 30 is an explanatory diagram for representing an example of a “11”disturb detection data latch processing operation by the multi-sensemethod;

FIG. 31 is an explanatory diagram for showing a first detailed operationof a program bias application process operation S11 in the programingoperation;

FIG. 32 is an explanatory diagram for indicating a final detailedoperation of a program bias application process operation S11 in theprograming operation;

FIG. 33 is an explanatory diagram for showing a detailed bit lineprecharge operation in a VWV 3 verify process operation;

FIG. 34 is an explanatory diagram for representing a detailed memorydischarge operation in the VWV 3 verify process operation;

FIG. 35 is an explanatory diagram for showing a detrailed prechargeoperation for a sense latching operation in the VWV 3 verify processoperation;

FIG. 36 is an explanatory diagram for showing a detailed sense latchoperation in the VWV 3 verify process operation;

FIG. 37 is an explanatory diagram for representing a detailed alljudgment operation in the VWV 3 verify process operation;

FIG. 38 is a timing chart for showing an example of operation timing inthe program data latch processing operation;

FIG. 39 is a timing chart for representing an example of programingoperation timing;

FIG. 40 is a timing chart for showing an example of operation timing inthe program verify processing operation;

FIG. 41 is a timing chart for representing an example of all judgingoperation timing;

FIG. 42 is an explanatory diagram for explanatorily indicating “01”program data latch processing operation by the multi-power supplymethod;

FIG. 43 is an explanatory diagram for explanatorily showing “00” programdata latch processing operation by the multi-power supply method;

FIG. 44 is an explanatory diagram for explanatorily representing “10”program data latch processing operation by the multi-power supplymethod;

FIG. 45 is an explanatory diagram for explanatorily indicating “00”erratic detection data latch processing operation by the multi-powersupply method;

FIG. 46 is an explanatory diagram for explanatorily showing “10” erraticdetection data latch processing operation by the multi-power supplymethod;

FIG. 47 is an explanatory diagram for explanatorily representing “11”disturb detection data latch processing operation by the multi-powersupply method;

FIG. 48 shows an operation waveform chart of “01” program data latchprocessing operation by the multi-power supply method;

FIG. 49 indicates an operation waveform chart of “00” program data latchprocessing operation by the multi-power supply method;

FIG. 50 represents an operation waveform chart of “10” program datalatch processing operation by the multi-power supply method;

FIG. 51 shows an operation waveform chart of “00” erratic detection datalatch processing operation by the multi-power supply method;

FIG. 52 indicates an operation waveform chart of “10” erratic detectiondata latch processing operation by the multi-power supply method;

FIG. 53 represents an operation waveform chart of “11” disturb detectiondata latch processing operation by the multi-power supply method;

FIG. 54 is an operation explanatory diagram for indicating variousoperation modes of the flash memory in connection with various voltageconditions;

FIG. 55 is a flow chart for indicating an example of a retry programfunction;

FIG. 56 is a flow chart for representing an example of a recoveryfunction;

FIG. 57 shows a stage transition diagram for representing internaloperations of the flash memory having the retry function and therecovery function;

FIG. 58 is a schematic block diagram for indicating an example of amemory card with using the flash memory;

FIG. 59 is a schematic block diagram for indicating an example of a dataprocessing system with using the flash memory;

FIG. 60 is an explanatory diagram for explaining a concept of the retryfunction and the recovery function;

FIG. 61 is a flow chart for describing an example of a process operationby receiving a reprogram command;

FIG. 62 is a flow chart for describing an example of a process operationby receiving a reprogram command used to reprogram data with respect toa portion of a sector;

FIG. 63 is a flow chart for describing another example of a processoperation by receiving a reprogram command used to reprogram data withrespect to a portion of a sector;

FIG. 64 is a flow chart for explaining an example of a partial erasefunction;

FIG. 65 is an explanatory diagram for showing a detailed front halfoperation of a designated sector data reading operation of FIG. 64;

FIG. 66 is an explanatory diagram for indicating a detailed rear halfoperation of the designated sector data reading operation of FIG. 64;and

FIG. 67 represents a relationship between a word line selecting levelused to read designated sector data and a threshold voltagedistribution.

DESCRIPTION OF THE PREFERRED EMBODIMENTS OVERALL STRUCTURE OF FLASHMEMORY

In FIG. 1, there is shown an overall structure of a flash memory 1according to a first embodiment mode of the present invention. In thisflash memory 1, 2 bits of information, or 2-bit data are programable ina single memory cell, and furthermore the 2-bit data are readable fromthis single memory cell.

Reference numeral 3 shows a memory array containing a memory mat, a datalatch circuit, and a sense latch circuit. The memory mat 3 contains alarge number of electrically erasable/programable non-volatile memorycell transistors. For instance, as represented in FIG. 2, a memory celltransistor is constituted by employing a source “S” and a drain “D”formed in either a semiconductor substrate or a memory well “SUB”; afloating gate “FG” formed via a tunnel oxide film in a channel region;and also a control gate “CG” overlapped via an interlayer insulatingfilm on the floating gate. The control gate CG is connected to a wordline 6, the drain D is connected to a bit line 5, and the source S isconnected to a source line (not shown in this drawing).

External input/output terminals I/O0 to I/O7 are commonly used as anaddress input terminal, a data input terminal, a data output terminal,and a command input terminal. X address signals inputted from theexternal input/output terminals I/O0 to I/O7 are supplied via amultiplexer 7 to an X address buffer 8. An X address decoder 9 decodesan internal complementary address signal output from the X addressbuffer 8 to drive the word line.

A sense latch circuit (not shown) is provided on one terminal side ofthe above-described bit line 5, and a data latch circuit (not showneither) is provided on the other terminal side of this bit line 5. Inresponse to a selection signal-outputted from a Y address decoder 11,the bit line 5 is selected by a Y gate array circuit 13. Y addresssignals entered from the external input/output terminals I/O0 to I/O7are preset to a Y address counter 12, and Y address signals which aresequentially incremented while starting from a preset value are suppliedto the Y address decoder 11.

A bit line selected by the Y gate array circuit 13 is conducted to aninput terminal of an output buffer 15 when data is outputted, whereasthis bit line is connected via a data control circuit 16 to an outputterminal of an input buffer 17 when data is inputted. The connectionsbetween the output buffer 15, the input buffer 17, and the input/outputterminals I/O0 to I/O7 are controlled by the multiplexer 7. Commandssupplied from the input/output terminals I/O0 to I/O7 are supplied viathe multiplexer 7 and the input buffer 17 to a mode control circuit 18.The above-explained data control circuit 16 may supply data of a logicvalue defined under control of the mode control circuit 18 to the memoryarray 3 in addition to the data supplied from the input/output terminalsI/O0 to I/O7.

To a control signal buffer circuit 19, a chip enable signal CEb, anoutput enable signal OEb, a program enable signal WEb, a serial clocksignal SC, a reset signal RESb, and a command enable signal CDEb aresupplied as an access control signal. The mode control circuit 18controls a signal interface function with respect to an external circuitin response to states of these signals, and also controls an internaloperation in accordance with a command code. In the case that a command,or data is entered to the input/output terminals I/O0 to I/O7, thecommand enable signal CDEb is asserted. When a command is inputted intothe input/output terminals, the program enable signal WEb is furthermoreasserted. When data is entered to the input/output terminals, theprogram enable signal WEb is negated. When an address is inputted, thecommand enable signal CDEb is negated, and the program enable signal WEbis asserted. As a result, the mode control circuit 18 can discriminatethe command, the data, and the address entered from the externalinput/output terminals I/O0 to I/O7 in a multiplex manner. While theerasing operation and the programing operation are performed, the modecontrol circuit 18 can assert ready/busy signals R/Bb and can notifythis condition to the external circuit.

The internal power supply circuit 20 produces various sorts of operationpower supply voltages 21 used to executeprograming/erase-verifying/reading operations, and then supplies theseoperation power supply voltages to the X address decoder 9 and thememory cell array 3.

In response to a command, the mode control circuit 18 controls theoverall arrangement of the flash memory 1. It should be noted thatoperations of the flash memory 1 are basically determined by commands.

Commands allocated to the flash memory 1 are exemplified in FIG. 3. Thatis, there are a read command, a recovery read command, an erase command,a program command, an additional program command, a retry programcommand, a partial erase command, and a reprogram command. In thisdrawing, a command code is expressed by the hexadecimal notation. Amongthe commands related to the reading operation (namely, read command, andrecovery read command), and also the commands related to the programingoperation, such a command (retry program command) to which the programdata need not be supplied is constituted by a first command, and othercommands are constituted by the first command and a second command. Thecontents of the respective commands will be described in detail.

The flash memory 1 contains a status register 180 used to indicate aninternal status, or conditions of this flash memory 1. The content ofthe status register 180 can be read out via the input/output terminalsI/O0 to I/O7 by asserting the output enable signal OEb. FIG. 4 shows arelationship between the contents of the respective bits of the statusregister 180 and the input/output terminals I/O0 to I/O7.

FIG. 5 represents a relationship between the data latch circuits and thesense latch circuits contained in the memory array 3. An array SLA ofthe sense latch circuit SL is arranged at a center of this drawing. Aswitch circuit/calculating circuit array 30L, a memory mat MML, anotherswitch circuit/calculating circuit array 31L, and an array DLLA of anupper digit data latch circuit DLL are arranged on the side of oneinput/output node of the sense latch circuit SL. Similarly, a switchcircuit/calculating circuit array 30R, a memory mat MMR, another switchcircuit/calculating circuit array 31R, and an array DLRA of a lowerdigit data latch circuit DLR are arranged on the side of the otherinput/output node of the sense latch circuit SL. Furthermore, as shownin FIG. 5, when a structure is tried to be grasped while giving anattention to a pair of bit line, the data latch circuits DLL and DLR areprovided via bit lines G-BLL and G-BLR at one pair of data input/outputnodes SLL and SLR of a static latching type sense latch circuit SL. Boththe data latch circuits DLL and DLR can latch program data bits suppliedvia the Y gate array circuit 13. In accordance with this example, sincethe flash memory 1 owns the 8-bit input/output terminals I/O0 to I/O7,the program data can be set to four pairs of bit lines of the data latchcircuits DLL and DLR by entering the program data 1 time. As representedin the correspondence relationship between the data latch circuitsDLL/DLR and the input/output terminals I/O4, I/O0 shown in FIG. 6, themodes of the data set are made constant. In this explanation, since theunit of the programing operation is set to the unit of the word line,after the program data have been set to the data latch circuits DLL andDLR, the programing operation is carried out by applying the programingvoltages. These data latch circuits DLL and DLR are related to the bitline of all of the memory cells in which selection terminals are coupledto one word line.

In the multi-level information storage technique realized by the flashmemory 1 shown in FIG. 1, an information storage state of a singlememory cell is selected to be one of an erase state (“11”), a firstprogram state (“10”), a second program state (“00”), and a third programstate(“01”). Four sets of these information storage states in total aresuch states determined by 2-bit data. In other words, such 2-bit data isstored into a single memory cell. A relationship between the data havingfour values and threshold voltages is indicated as in a thresholdvoltage distribution diagram of FIG. 7.

To achieve the threshold value distribution as indicated in FIG. 7, 3different sorts of program verify voltages are set which are applied tothe word line during the programing operation. Then, these three programverify voltages are sequentially switched, and the programing operationsare carried out three times in the separate manner. In FIG. 7, symbolsVWV1, VWV2, and VWV3 are program verify voltages employed when the firstprogram state, the second program state, and the third program state areobtained, respectively.

FIG. 8 indicates an example of voltage applying conditions for the wordline and the bit line during each of the three different programingoperations. A voltage of 0 V is applied to a selected bit line, and avoltage of 6 V is applied to a non-selected bit line during a programingoperation. Although the present invention is not limited to thisexample, for instance, a voltage of 17 V is applied to the word line.The longer the application time of the high program voltage is applied,the higher the threshold voltage of the memory cell is increased. Thethree sorts of program threshold voltages may be controlled bycontrolling the duration time of such high voltage conditions, andfurthermore by controlling the level of the high voltage applied to theword line.

Whether 0 V, or 6 V is applied to the bit line may be determined basedupon a logic value of program control information latched by the senselatch circuit SL. The program control information may be controlled insuch a manner that when the data latched by the sense latch circuit SLowns the logic value of “1”, the programing operation is not selected,whereas when the data latched by the sense latch circuit SL owns thelogic value of “0”, the programing operation is selected in the side ofthe programing operation selected memory mat (a detailed controloperation thereof will be explained later). It should also be noted thata precharge circuit is contained in the above-explained switchcircuit/calculating circuit. This precharge circuit is operated in sucha way that when the data latched in the sense latch circuit is “1” andalso 6 V is applied to the bit line, the bit line is previouslyprecharged. As described above, since the bit line is precharged by theprecharge circuit in advance, a peak current produced when 6 V isapplied to the bit line can be reduced.

The latching operation of the program control information with respectto the sense latch circuit is controlled every time each of the threeprograming operations is carried out. This program control is performedby the mode control circuit 18. At this time, the program controlinformation which should be latched by the sense latch circuit SL isproduced by performing a calculation with using the program data bitssaved by the data latch circuits DLL and DLR every programing operation.The produced program control information is latched by the sense latchcircuit SL. For example, as indicated in FIG. 6, assuming now that theprogram data latched by the data latch circuits DLL and DLR is “01”,this “01” state corresponds to the third program state (see FIG. 7). Theprogram operation which has been subdivided into three programoperations after the erase state - - - ???. In the case that such aprograming sequence is employed so as to produce the program states inthe order of the lower threshold voltages such as a second mode (Case 2)of FIG. 9, a calculation result by employing the program data (“01”) ofthe data latch circuits DLL and DLR is set to a logic value “1” duringthe programing operation executed to obtain the first program state inthe first time; a calculation result by employing the program data(“01”) of the data latch circuits DLL and DLR is set to a logic value“1” during the programing operation executed to obtain the secondprogram state in the second time; and a calculation result by employingthe program data (“01”) of the data latch circuits DLL and DLR is set toa logic value “0” during the programing operation executed to obtain thethird program state in the third time. Such a calculation is performedby activating the above-described switch circuit/calculating circuit. Asa consequence, the program voltage is applied only during the thirdprograming operation, so that the third program state (“01”) within thefour values can be realized in this memory cell.

As previously explained, when the programing operations are carried outin the three different times, the program data which is firstly latchedby the data latch circuits DLL and DLR is not destroyed, but may bemaintained. This is because the following control sequence is employed.That is, the 2-bit program data latched by the data latch circuits DLLand DLR are used to be calculated every time the programing operation iscarried out, and then the calculated results are set to the sense latchcircuit SL every time the calculation is carried out.

It should also be noted that the order for changing the thresholdvoltage during the programing operation is not limited to the secondstate (Case 2) shown in FIG. 9, but may be modified. For example, as inthe first mode (Case 1), the higher threshold voltage may be firstlyset. Also, as in the third mode (Case 3), the changing rates of thethreshold voltages obtained in a single programing operation may be madeequal to each other as to any of the program states. Alternatively, thethreshold voltages may be controlled as in the fourth mode (Case 4), orthe fifth mode (Case 5).

When data is read out, three sorts of voltages are set as word lineselection levels which are applied to the word line. While these threesorts of word line selection levels are sequentially changed, thereading operations are performed three times. The data having two values(namely, 1 bit data) which is read from the memory cell during each ofthe reading operations is latched by the sense latch circuit 4. Everytime the data is latched, such a calculation is carried out that thesense-latched content is reflected onto the 2-bit information of thedata latch circuit. The 2 bits acquired in the data latch circuits DLLand DLR as a result of the sense latching operations executed 3 timesare set as data corresponding to the information having the 4 valuessaved in this memory cell.

Detailed Structure of Memory Array

Next, a detailed structure of the above-explained memory array will nowbe explained. FIG. 10 shows an example of a circuit arrangement of theabove-explained flash memory 1 which is mainly arranged by a sense latchcircuit and a data latch circuit. As apparent from FIG. 10, circuitarrangements located in the vicinity of right/left bit lines G-BLR/G-BLLof the sense latch circuit SL are made of mirror-symmetrical structureswhile positioning the sense latch circuit SL as a center.

Memory mats MML and MMR contain a plurality of electrically programablememory cells MC (several memory cells are typically indicated). Asindicated in FIG. 2, one memory cell MC is constituted by a singleelectrically programable transistor (memory cell transistor) having acontrol gate, a floating gate, a source and a drain. Although notlimited to this example, a layout structure of a memory cell is aso-called “AND” type memory structure. As exemplified on the side of thememory mat MMR, in the AND type structure, a plurality of theabove-described memory cell transistors are arranged in a parallelmanner via the respective diffusion layers (semiconductor regions) whichcommonly constitute a source and a drain. The diffusion layer whichconstitutes the drain is coupled via a selection transistor M1 to thebit line G-BLR, and the diffusion layer which constitutes the source iscoupled via another selection transistor M2 to a common source lineVMMR. The AND type memory cell structure will be discussed more indetail. Symbol “SSi” shows a switch control signal of the selectiontransistor M2, and symbol “SDi” indicates a switch control signal of theselection transistor M1. Also, symbol “WL” represents a word linecoupled to the control gate of the memory cell MC. It should be notedthat another memory mat MML is constructed in a similar manner to thatof the above-explained memory mat MMR. It should also be understood thata P-channel type MOS transistor is illustrated by giving an arrow to agate of a substrate thereof in order to be discriminated from anN-channel type MOS transistor in the drawings attached to thespecification of the present invention.

The sense latch circuit SL is constructed of a static latch circuit madeof a pair of CMOS inverters, namely a circuit constituted by that aninput terminal of one CMOS inverter is coupled to an output terminal ofthe other CMOS inverter. Symbols “SLR” and “SLL” indicate one pair ofinput/output nodes of the sense latch circuit SL. Symbols “SLP” and“SLN” represent operation power supplies of the sense latch circuit SL.Both a series circuit of MOS transistors M3L and M4L, and also anotherseries circuit of MOS transistors M3R and M4R will constitute a columnswitch circuit which enters data into the sense latch circuit SL by wayof a complementary signal. MOS transistors M5L and M5R selectivelydischarge the input/output nodes SLL and SLR.

The data latch circuit DLR is constructed of a static latch circuit madeof a pair of CMOS inverters, namely a circuit constituted by that aninput terminal of one CMOS inverter is coupled to an output terminal ofthe other CMOS inverter. Symbols “DLRR” and “DLRL” indicate one pair ofinput/output nodes of the data latch circuit DLR. Symbols “DLPR” and“DLNR” represent operation power supplies of the data latch circuit DLR.Both a series circuit of MOS transistors M6L and M7L, and also anotherseries circuit of MOS transistors. M6R and M7R will constitute a columnswitch circuit which enters data into the data latch circuit DLR by wayof a complementary signal. MOS transistors M8L and M8R are transistorsfor selectively charging the input/output nodes DLRL and DLRR to avoltage FPC.

The data latch circuit DLL is constructed of a static latch circuit madeof a pair of CMOS inverters, namely a circuit constituted by that aninput terminal of one CMOS inverter is coupled to an output terminal ofthe other CMOS inverter. Symbols “DLLR” and “DLLL” indicate one pair ofinput/output nodes of the data latch circuit DLL. Symbols “DLPL” and“DLNL” represent operation power supplies of the data latch circuit DLL.Both a series circuit of MOS transistors M9L and M10L, and also anotherseries circuit of MOS transistors M9R and M10R will constitute a columnswitch circuit which enters data into the data latch circuit DLL by wayof a complementary signal. MOS transistors M11L and M11R are transistorsfor selectively charging the input/output nodes DLLL and DLLR to avoltage FPC.

The above-described switch circuit/calculating circuit 30R is arrangedby MOS transistors M20R to M25R. The MOS transistor M20R receives avoltage level of the input/output node SLR of the sense latch circuit SLat the gate thereof. When this voltage level is a high level, thevoltage FPC is applied via the MOS transistor M21R to the bit lineG-BLR. The supplied voltage level is determined by controlling aconductance of the MOS transistor M21R based upon the voltage level ofthe control signal PCR. The transistor M22R constitutes a transfer gatecapable of selectively conducting both the input/output node SLR and thebit line G-BLR. The MOS transistor M23R is used to all judgment. The MOStransistors M24R and M25R are used to precharge and also discharge thebit line G-BLR. The switch circuit/calculating circuit 30L is similarlyarranged by MOS transistors M20L to M25L. It should be noted that gatecontrol signals for the MOS transistors M20L, M22L, M24L, and M25L aredifferent from those for the MOS transistors M20R, M22R, M24R, and M25R.

The above-described switch circuit/calculating circuit 31R is arrangedby MOS transistors M26R to M28R. The MOS transistor M26R receives avoltage level of the input/output node DLRL of the data latch circuitDLR at the gate thereof. When this voltage level is a high level, thevoltage FPC is applied via the MOS transistor M27R to the bit lineG-BLR. The supplied voltage level is determined by controlling aconductance of the MOS transistor M27R based upon the voltage level ofthe control signal PCDR. The transistor M28R constitutes a transfer gatecapable of selectively conducting both the input/output node DLRL andthe bit line G-BLR. The switch circuit/calculating circuit 31L issimilarly arranged by MOS transistors M26L to M28L. It should be notedthat gate control signals for the MOS transistor M27L and M28L aredifferent from those for the MOS transistors M27R and M28R.

In the circuit arrangement of FIG. 10, basic circuit operations duringthe reading operation and the programing operation will now bedescribed. For example, in FIG. 10, in the case that the readingoperation in the verify operation is executed with respect to the memorycell MC contained in the memory mat MMR, the set MOS transistor M5Lprovided on the side of the non-selected memory mat MML is brought intoan ON state so as to activate the sense latch circuit SL, so that a highlevel is latched at the input/output node SLR of this sense latchcircuit SL. Then, for example, the control signal PCR is controlled tobe 1 V+Vth in order to precharge the bit line G-BLR to 1 V. On the otherhand, on the side of the non-selected memory mat MML, the gate voltageRPCL of the MOS transistor M24L is controlled to 0.5 V+Vth so as toprecharge the bit line G-BLL to 0.5 V. This voltage of 0.5 V is set tothe reference level of the sense operation by the sense latch circuitSL. On the other hand, during the reading operation in response to theread command, the signal RPCR on the side of the selected memory mat(MMR) is set to 1 V+Vth, and also the signal RPCL on the side of thenon-selected memory mat (MML) is set to 0.5 V+Vth so as to precharge thebit lines of the selected memory mat side to 1 V in the batch mode, andalso precharge the bit lines of the non-selected memory mat side to 0.5V in the batch mode. If the selected memory mat is equal to “MML” andfurther the non-selected memory mat is equal to “MMR”, then the signalRPCR is apparently set to 0.5 V+Vth and the signal RPCL is set to 1V+Vth. As previously explained, the precharged voltage of 0.5 V is usedas the reference level. After the word line is selected, both thetransfer MOS transistor M22L and the transfer MOS transistor M22R areturned ON. At this time, the sense latch circuit SL senses as to whetheror not the level of the bit line G-BLR is higher than 0.5 V to latch thedata read from the memory cell MC.

During the programing operation, after the program control informationis latched by the sense latch circuit SL, both the gate control signalsPCR and PCL of the MOS transistors M21R and M21L are controlled to highlevels. As a result, the bit line coupled to the input/output node onthe high level side of the sense latch circuit SL is precharged viaeither the MOS transistor M20R or the MOS transistor M20L to a highlevel. Thereafter, both the MOS transistor M22R and the MOS transistorM22L are brought into ON states, so that a voltage is applied from thepower supply SLP of the sense latch circuit SL to the bit line coupledto the input/output nodes on the high level side of the sense latchcircuit SL. At this time, a high program voltage is being applied to theword line of the program sector of such a memory mat which is selectedfor the programing operation. As a consequence, such a memory cell thatthe bit line thereof is set to a low level such as the ground voltage isto be written among the memory cells connected to the control gate towhich the program voltage is applied on the side of theprograming-operation selected memory mat.

The transistors M23L and M23R are used for the above-described alljudgment. The gates of the MOS transistors M23L and M23R are coupled tothe corresponding bit lines, and the sources thereof are coupled to theground potential. In actual, there are provided a large number of thecircuit arrangements related to the bit lines G-BLL and G-BLR where onesense latch circuit SL is typically arranged as a center, as shown inFIG. 10. While sandwiching the sense latch circuit SL, all of the drainsof the MOS transistors M23L located on the left side of FIG. 10 arecommonly connected to a terminal ECL, and a current will flow throughthis terminal ECL. This current is defined in response to a condition(level) of the left-sided bit line typically defined as the bit lineG-BLL. Similarly, while sandwiching the sense latch circuit SL, all ofthe drains of the MOS transistors M23R located on the right side of FIG.10 are commonly connected to another terminal ECR, and a current willflow through this terminal ECR. This current is defined in response to acondition (level) of the right-sided bit line typically defined as thebit line G-BLR. Although not shown in this drawing, a current sense typeamplifier is provided. The current type amplifier may detect as towhether or not all of the conditions of the bit lines G-BLL (G-BLR)provided on the left-side (right-side) of the sense latch circuit SL aremade equal to each other in response to a current change in the terminalECL (ECR). This amplifier is employed so as to detect as to whether ornot all of the memory cells which are to be processed by either theerase verify operation or the program verify operation become apreselected threshold voltage, namely, this amplifier is used for theall judgment.

The structures of the memory mats MMR and MML shown in FIG. 10 are anAND type structure. FIG. 11 shows further detailed structure of the ANDtype memory mat. Although not shown in this drawing, the memory cellindicated in FIG. 11 owns such a structure manufactured by a processoperation with employment of two layers of metal wiring layers. A memorycell MC and selected MOS transistors M1 and M2 are formed at a positionwhere a diffusion layer along a longitudinal direction is intersectedwith a control gate made of polysilicon elongated along a transversedirection. The memory cell MC of the flash memory is made of, forinstance, an N-channel type MOS transistor formed on a P type substrate.The memory mat of the flash memory is not limited to the above-explainedAND type memory mat, but may be manufactured by employing a NOR typememory mat shown in FIG. 12, a DiNOR type memory mat indicated in FIG.13, a NAND type memory mat represented in FIG. 14, and an HiCR typememory mat indicated in FIG. 15. In any of these memory mat structures,the memory cells of the flash memories basically have the samestructures. When the memory cells are arranged in an array shape, thefeatures of the respective memory mats appear. Since the NOR type memorymat requires the contacts with the bit line (metal wiring layers) everymemory, the occupied area can be hardly reduced. To the contrary, sincethe contacts with the bit lines may be arranged every block in the NANDtype memory mat, the DiNOR type memory mat, and the AND type memory mat,the occupied area can be reduced.

Detailed Programing Operation

FIG. 16 is a flow chart for describing an example of programingoperations designated by a first command (1FH) and a second command(40H). In this programing operation, a word line is used as one unit(namely, sector programing operation).

First, when the first command (1FH) is fetched (step S1), the next inputis fetched as a sector address (step S2). An input after the sectoraddress has been fetched is acquired as program data (step S3) until thesecond command (40H) is fetched (step S4). The sector address acquiredat the step S2 is an X address. In response to this X address, one wordline to which a high program voltage is applied is selected. The programdata acquisition repeatedly executed at the step S3 is carried out in abyte unit with respect to the data latch circuits DLL and DLR whilesequentially incrementing the Y-address counter 12 from the initialvalue thereof. For example, as indicated in FIG. 5, the program data islatched by the data latch circuit arrays DLLA and DLRA which areallocated to one pair of memory mats MML and MMR related to one senselatch circuit array SLA. Assuming now that control gates of “n” piecesof memory cells are coupled to a single word line, n-bit program dataare latched to each of the data latch circuit arrays DLLA and DLRA.

After the program data is latched, the “01” program process operationTS1, “00”, program process operation TS2, “10” program process operationTS3, and further the erratic/disturb detection process operation TS4 arecarried out.

As exemplified in FIG. 17, the above-described “01” program processoperation TS1 corresponds to such a process operation that a thresholdvoltage of a memory cell MC is brought into the third program state(“01”) with respect to the erase state (“11”) equal to one state within4 values. In this “01” program process operation TS1, VWV 3 is employedas a program verify voltage. As schematically indicated in FIG. 16, the“01” program process operation TS1 is mainly classified into a processoperation in which in response to the 2-bit data of “01” latched in thedata latch circuits DLL and DLR, program control data having an enablelevel is latched by the sense latch circuit SL (“01” data latching);another process operation in which in response to the latched programcontrol data having the enable level, a programing operationcorresponding to the data “01” is carried out for a memory celltransistor (“01” data programing); and furthermore another processoperation in which a program verify operation by the verify voltage VWV3 with respect to this programing operation is carried out (programverify VWV 3).

As exemplified in FIG. 18, the above-described “00” program processoperation TS2 corresponds to such a process operation that a thresholdvoltage of a memory cell MC is brought into the second program state(“00”) with respect to the erase state (“11”) equal to one state within4 values. In this “00” program process operation TS2, VWV 2 is employedas a program verify voltage. As schematically indicated in FIG. 16, this“00” program process operation TS2 is mainly classified into a processoperation in which in response to the 2-bit data of “00” latched in thedata latch circuits DLL and DLR, program control data having an enablelevel is latched by the sense latch circuit SL (“00” data latching);another process operation in which in response to the latched programcontrol data having the enable level, a programing operationcorresponding to the data “00” is carried out for a memory celltransistor (“00” data programing); and furthermore another processoperation in which a program verify operation by the verify voltage VWV2 with respect to this programing operation is carried out (programverify VWV 2).

As exemplified in FIG. 19, the above-described “10” program processoperation TS3 corresponds to such a process operation that a thresholdvoltage of a memory cell MC is brought into the first program state(“10”) with respect to the erase state (“11”) equal to one state within4 values. In this 10″ program process operation TS3, VWV 1 is employedas a program verify voltage. As schematically indicated in FIG. 16, the“10” program process operation TS3 is mainly classified into a processoperation in which in response to the 2-bit data of “10” latched in thedata latch circuits DLL and DLR, program control data having an enablelevel is latched by the sense latch circuit SL (“10” data latching);another process operation in which in response to the latched programcontrol data having the enable level, a programing operationcorresponding to the data “10” is carried out for a memory celltransistor (“10” data programing); and furthermore another processoperation in which a program verify operation by the verify voltage VWV1 with respect to this programing operation is carried out (programverify VWV 1). It should be understood that the above-explained programverify voltages are determined as follows:VWV 3>VWV 2>VWV 1.

Also, as exemplified in FIG. 20, the above-explained erratic/disturbdetection process operation TS4 corresponds to a disturb detectionprocess operation (“11” word disturb detection VWDS of FIG. 16) fordetecting as to whether or not a threshold voltage of a memory cellunder erase state exceeds VWDS; and to such a process operation fordetecting as to whether or not the threshold voltage of the memory celltransistor to which the data of “10” has been written exceeds VWE 1(“10” erratic detection VWE 1 of FIG. 16); and also such an erraticdetection process operation for detecting as to whether or not thethreshold voltage of the memory cell transistor to which the data “00”has been written exceeds VWE 2 (“00” erratic detection VWE 2 of FIG.16).

When a series of processed results obtained up to the erratic/disturbdetection process TS4 is normal, a pass flag is set to the statusregister 180 (step S5), and then a series of programing processoperations are accomplished (OK). To the contrary, when the detectionresult obtained in the erratic/disturb detection process TS4 is error, ajudgment is made as to whether or not error occurrence times reach apreselected time (step S6). If the error occurrence times do not reachthis preselected time, then the data of the program sector is erased(step S7), and a series of programing operations is again commenced fromthe “01” programing operation. While the retry time is saved in acounter means (not shown), a check is made as to whether or not theerror occurrence times reach a preselected time based upon the countvalue of the counter means (step S6). When the error occurrence timesreach a preselected time, a fail flag is set to the status register 180(step S8), and a series of programing process operations is ended underabnormal condition (NG).

As apparent from FIG. 16, when the data programing operation isrepeatedly performed by performing the reerasing operation, the programdata of the program sector need not be fetched. This is because theprogram data for 1 sector, which has been once latched into the datalatch circuits DLL and DLR at the previous step S3, is not electricallydestroyed even when the above-described programing process operationsTS1 to TS4 are carried out, but this program data is still left in thedata latch circuits DLL and DLR.

This depends upon the above-explained latch operation control mode ofthe program control information with respect to the sense latch circuitSL. In other words, the program control information which should belatched by the sense latch circuit SL is produced every time thecalculation with employment of the program data bit latched by the datalatch circuits DLL and DLR is carried out with respect to each of theprograming operations. Then, the produced program control information islatched by the sense latch circuit SL. For instance, as indicated inFIG. 6, assuming now that the program data latched in the data latchcircuits DLL and DLR is equal to “01”, the “01” state corresponds to thethird program state as represented in FIG. 7. In such a case that thethree-divided programing operations after the erasing state are carriedout in the second mode (Case 2) of FIG. 9, a calculation result is alogic value of “1”, which is obtained by employing the program data(“01”) of the data latch circuits DLL and DLR when the programingoperation for acquiring the first programing state is performed in thefirst time. Similarly, a calculation result is a logic value of “1”,which is obtained by employing the program data (“01”) of the data latchcircuits DLL and DLR when the programing operation for acquiring thesecond programing state is performed in the second time. Also, acalculation result is a logic value of “0”, which is obtained byemploying the program data (“01”) of the data latch circuits DLL and DLRwhen the programing operation for acquiring the third programing stateis performed in the third time. Such a calculation is carried out byactuating the switch circuit/calculating circuit. As a result, onlyduring the third programing operation, the programing high potential isapplied between the drain of the memory cell transistor and the controlgate thereof, so that the third program state (“01”) among the fourvalues may be realized in this memory cell transistor.

As previously explained, when the programing operation is carried out bysubdividing this programing operation into three programing operations,the program data which has been latched into the data latch circuits DLLand DLR at the first time is not electrically destroyed, but is stillmaintained. This is because the following control sequence is employed.That is, the 2-bit program data latched in the data latch circuits DLLand DLR is used to be calculated and then the calculated program data isset to the sense latch circuit SL every time the programing operation iscarried out. Similarly, even in the erratic/disturb detection processoperation, since such a control sequence is employed that thecalculation result obtained by employing the 2-bit program data latchedby the data latch circuits DLL and DLR is set to the sense latch circuitSL every time the programing operation is carried out, the program datawhich has been latched into the data latch circuits DLL and DLR at thefirst time is not electrically destroyed, but is still remained.

It should be noted that there is a difference in the calculating methodsfor the process operations (data latch process operations) for latchingthe calculated results with employment of the 2-bit program data latchedin the data latch circuits DLL and DLR in the sense latch circuit SL,because of a relationship between the data latch process operations andthe present process operations in the steps TS1 to TS4.

FIG. 21 theoretically shows an example of calculation contents of theabove-explained data latch process operations. The calculation contentsshown in FIG. 21 are related to sense latch data on the side of theoperation-selected memory mat (namely, input/output node data of senselatch circuit SL on the side of operation-selected memory mat). Althoughthe concrete calculating method will be discussed later, both themulti-sense method and the multi-power supply method may be employed.The multi-sense method corresponds to such an operation that while bitline precharge voltages are selected as three levels of 0V, 0.5V, and1.0V, the sense operations by the sense latch circuit SL are carried outplural times so as to latch subject data into the sense latch circuitSL. The multi-power supply method corresponds to such an operation thatwhile bit line precharge voltages are selected as four levels of 0V,0.5V, 1.0V and 2.0V, a single sense operation by the sense latch circuitSL is carried out so as to latch subject data into the sense latchcircuit SL.

In FIG. 21, symbols “A” and “B” show 2-bit program data corresponding toa single sense latch circuit SL. Concretely speaking, symbol “A”indicates an upper digit data bit latched by the data latch circuit DLL,and symbol “B” shows a lower digit data bit latched by the data latchcircuit DLR. In accordance with FIG. 21, when the “01” program datalatch process operation is carried out, a logic OR gating operationbetween the data bit A and the inverted data of the data bit B isperformed; when the “00” program data latch process operation is carriedout, a logic OR gating operation between the data bit A and the data bitB is performed. Also, when the “10” program data latch process operationis carried out, a logic OR gating operation between the data bit B andthe inverted data of the data bit A is performed; when the “00” erraticdetection data latch process operation is carried out, a negative logicOR gating operation between the data bit A and the data bit B isperformed. Also, when the “10” erratic detection data latch processoperation is carried out, a logic AND gating operation between the databit A and the inverted data of the data bit B is performed; and furtherwhen the “11” erratic detection data latch process operation is carriedout, a logic AND gating operation between the data bit A and the databit B is performed.

In the case that the calculation logic of FIG. 21 is employed, logicvalues of calculation results with respect to the logic values of thedata bits A and B are given as shown in FIG. 22. As previouslyexplained, the logic value “0” (namely, low level) of the sense latchdata implies the application of the programing potential (programselection) FIG. 23 is a flow chart for describing a more detailedoperation of the above-described “01” programing process operation TS1.In accordance with this flow chart, the “01” programing processoperation TS1 is constituted by the data latch process S10, the “01”program bias application process S11, the program verify process S12,and the all judgment process S13. In the data latch process S10, whenthe 2-bit program data “01” is latched in the two data latch circuitsDLL and DLR corresponding thereto, a program enable bit is latched bythe sense latch circuit SL, whereas when the program data other than theabove-described program data “01” is latched in the two data latchcircuits DLL and DLR, a program disable level is latched by the senselatch circuit SL. In the “01” program bias application process S11, whena program enable level is latched by the sense latch circuit SL, a highpotential is required to be applied between the control gate and the bitline on the input/output node side of this enable level in theprograming-operation selected memory mat. At the process step S12, theverify operation based upon the program verify voltage VWV3 is carriedout. At the process step S13, a judgment is made as to whether or notthe all judgment result fails. When the all judgment result fails, the“01” programing process operation is returned to the process step S11.When the all judgment result is normal, the “01” programing processoperation is ended. Since the calculation methods, the program biasvoltages, and the program verify voltages for the data latch processoperations are individually specific to the above-explained processoperations TS2 and TS3, and also the schematic process sequentialoperations are identical to the process sequential operation of theprocess operation TS1 as described in the flow chart thereof, detailedprocess operations thereof are omitted.

FIG. 24 is a flow chart for describing a detailed operation of theabove-explained “10” erratic detection process operation. In accordancewith this flow chart, the “10” erratic detection process operation isarranged by a data latch process S20, an erratic verify process S21, andan all judgment process S22. In the data latch process S20, a latchprocess operation is carried in accordance with the calculation contentsshown in FIG. 21 and FIG. 22. In the erratic verify process S21, theverification is carried out as to whether or not the threshold voltageexceeds VWE 1 with respect to the memory cell transistor to which “10”program data has been written. At the process step S22, a judgment ismade as to whether or not the all judgment result fails. When the alljudgment result fails, the “10” erratic detection process operation isadvanced to the process step S6. When the all judgment result is normal,the “10” erratic detection process operation is ended. Since thecalculation methods and the program verify voltages for the data latchprocess operations other than the erratic/disturb detection process TS4are individually specific thereto TS2 and TS3, and also the schematicprocess sequential operations are identical to the process sequentialoperation of the “10” erratic detection process operation, detailedprocess operations thereof are omitted.

Data Latch Process Operations

FIG. 25 to FIG. 30 represent an example of calculating process methodsof data latch process operations as typically defined in theabove-explained steps S10 and S20. In these drawings, operation-selectedmemory mats are defined as right-sided memory mats (MMR) as viewed. Alsothe respective drawings, as to numeral numbers expressed incorrespondence with either signals or nodes indicated in each of steps,a numeral number having a decimal point implies a voltage, whereasnumeral number without a decimal point implies a logic value (high levelimplies “1”, and low level implies “0”). Also, as to numeral numberswith brackets expressed in correspondence with the data latch circuitsDLL and DLR, the numeral number outside the bracket implies a logicvalue of a left-sided input/output node, and the numeral number insidethe bracket implies a logic value of a right-sided input/output node.

Referring now to FIG. 25, the “01” program data latch process operationS10 by the multi-sense method will be described in detail.

It is now assumed that data have been latched in the data latch circuitsDLL and DLR. FIG. 25 represents such a case that the latched data arefour different data, i.e., “01”, “00”, “10”, and “11”. At a step 2 ofthis drawing, the bit line G-BLL on the side of the non-selected memorymat is precharged via the transistor M24L to 0.5V (a). Also, the bitline G-BLR is precharged to either 0.0V or 1.0V by employing thetransistors M26R and M27R in response to the data latched by the datalatch circuit DLR (b).

At a step 3, in accordance with the results of the above conditions (a)and (b), the sense latch circuit SL is activated to execute the senselatch operation. As a result, the right/left input/output nodes SL (L)and SL (R) of the sense latch circuit SL are brought into conditions (c)and (d) shown in FIG. 25.

At a step 4, in accordance with the result of the condition (c), thevoltage of the bit line G-BLL employs a voltage of (e). Also, the otherbit line G-BLR is cleared to a logic value “0”.

At a step 5, the transistor M26L is turned ON by the data having thelogic value of “1” latched by the data latch circuit DLL, and the bitline G-BLL corresponding to the data latch circuit DLL for latching thelogic value “1” is forcibly set to a low level via the transistors M27Land M26L (g). Also, both the input/output node SL (L) and theinput/output node SL (R) of the sense latch circuit SL are cleared tothe logic value of “0”.

At a step 6, the bit line G-BLR on the side of the selected memory matis precharged to 0.5V (i). Then, at a step 7, when the sense latchoperation of the sense latch circuit SL is executed, either theinput/output node SL (L) or the input/output node SL (R) on the side ofthe selected memory mat of the sense latch circuit SL latches the logicvalue of “0” only when “01” is latched in the data latch circuits DLLand DLR (j). FIG. 38 indicates an example of operation timing of theabove-described program data latch process operation.

In such a case that the latched data of the input/output node on theside of the operation-selected memory mat in the sense latch circuit SLis equal to the logic value of “0”, the level at the bit line connectedto this input/output node is set to 0V, and a high program potential isapplied between the drain (connected to this bit line) of the memorycell transistor and the control gate thereof, so that the programingoperation with respect to the memory cell transistor is carried out.

FIG. 31 shows a detailed operation of the above-described program biasapplication process operation S11 in the programing operation when theprogram bias application is commenced. FIG. 32 indicates a detailedoperation of the above-explained program bias application processoperation S11 in the programing operation when the program biasapplication is ended. In other words, a program blocking voltage isconducted to the bit line of the programing-operation non-selectedmemory mat. In response to the latched data of the sense latch circuitSL, the bit line on the side of the programing-operation selected memorymat is brought into either 0V or 6V, and such a high voltage as 17V isapplied to the word line, so that the program operation is carried outwith respect to the memory cell transistor. After the programingoperation is accomplished, the bit lines G-BLL and G-BLR are discharged.FIG. 39 shows an example of the program operation timing.

After the program bias has been applied, the above-explainedprogram-verify process operation S12 is carried out. For example, asexemplified in FIG. 33, the bit line provided on the side of theprograming-operation non-selected memory mat, for instance, G-BLL isprecharged to the reference voltage 0.5V, and also the bit line providedon the side of the programing-operation selected memory mat, forinstance, G-GLR is precharged to 1.0V. Thereafter, as exemplified inFIG. 34, the word line selecting operation with employment of the verifyvoltage is carried out. Since the word line selecting operation isperformed, such a memory cell whose threshold voltage is lower than thisverify voltage is turned ON, whereas such a memory cell whose thresholdvoltage is higher than this verify voltage is turned OFF. Then, a statechange caused by a change in potentials of the bit line, which is causedby the above word line selecting operation, is detected by the senselatch circuit SL (see FIG. 35). Finally, the defined data is latched(see FIG. 36). FIG. 40 represents an example of operation timing of theprogram verification operation.

After the sense latch circuit SL has latched the defined data, theabove-described all judgment process operation S13 is performed. In thisall judgement process operation, a check is made as to whether or notthe MOS transistor of the bit line provided on the side of theprograming-operation non-selected memory mat, for example, the MOStransistor M23L is turned ON. If there is even one memory celltransistor in which the programing operation fails, the potentials atboth the bit line connected to this transistor and the bit line locatedopposite to this bit line become high levels, so that the transistorM23L is turned ON, through which a current will flow (see FIG. 37).While the current flows, the programing operation fails. As previouslyexplained, a bias voltage is again applied to the memory celltransistor. FIG. 41 indicates an example of operation timing of the alljudgement process operation.

It should be noted that FIG. 26 indicates a detailed operation of the“00” program data latch process operation by the multi-sense method, andFIG. 27 represents a detailed operation of the “10” program data latchprocess operation by the multi-sense method. Also, FIG. 28 indicates adetailed operation of the “00” erratic detection data latch processoperation by the multi-sense method, and FIG. 29 represents a detailedoperation of the “10” erratic detection data latch process operation bythe multi-sense method. Also, FIG. 30 shows a detailed operation of the“11” disturb detection data latch process operation by the multi-sensemethod. Precisely speaking, although concrete contents of these processoperations are different from the concrete content of the data latchprocess operation shown in FIG. 25, these process operations commonlyemploy the precharge operations and the sense operations. Accordingly,since the contents of these process operations may be readilyunderstood, a detailed description thereof is omitted.

FIG. 42 to FIG. 53 represent detailed operation data latch processoperations in the case of the multi-power supply method. Similar to FIG.42 to FIG. 47, and FIG. 25 to FIG. 30, in these drawings,program-operation selected memory mats are defined as right-sided memorymats as viewed. Also, the respective drawings, as to numeral numbersexpressed in correspondence with either signals or nodes indicated ineach of steps, a numeral number having a decimal point implies avoltage, whereas a numeral number without a decimal point implies alogic value (high level implies “1”, and low level implies “0”).

Referring now to FIG. 42, a detailed operation will be made of, forexample, a “01” program data latch process operation by the multi-powersupply method.

It is now assumed that data have been latched in the data latch circuitsDLL and DLR. FIG. 42 represents such a case that the latched data arefour different data, i.e., “01”, “00”, “10”, and “11”. At a step 1 ofthis drawing, the bit line G-BLL on the side of the non-selected memorymat is precharged via the transistor M24L to 1.0V (a). Also, the bitline G-BLR on the side of the selected memory mat is precharged via thetransistor M24R to 2.0V(b).

At a step 2, the transistor M26L is turned ON by the data having thelogic value of “1” latched by the data latch circuit DLL, and the bitline G-BLL corresponding to the data latch circuit DLL for latching thelogic value “1” is forcibly set to a low level via the transistors M27Land M26L (c). Similarly, the transistor M26R is turned ON by the datahaving the logic value of “1” latched by the data latch circuit DLR, andthe bit line G-BLR corresponding to the data latch circuit DLR forlatching the logic value “1” is forcibly set to a low level via thetransistors M27R and M26R (d).

At a step 3, the bit line G-BLR of 0.0V is precharged to 0.5V (e). Then,at a step 4, when the sense latch operation of the sense latch circuitSL is executed, either the input/output node SL (L) or the input/outputnode SL (R) on the side of the selected memory mat of the sense latchcircuit SL latches the logic value of “0” only when “01” is latched inthe data latch circuits DLL and DLR (f). FIG. 48 indicates an example ofoperation timing of the above-described “01” program data latch processoperation. In such a case that the latched data of the input/output nodeon the side of the operation-selected memory mat in the sense latchcircuit SL is equal to the logic value of “0”, the level at the bit lineconnected to this input/output node is set to 0V, and a high programpotential is applied between the drain (connected to this bit line) ofthe memory cell transistor and the control gate thereof, so that theprograming operation with respect to the memory cell transistor iscarried out.

FIG. 43 shows a detailed operation of the above-described “00” programdata latch process operation by the multi-power supply method. FIG. 49shows an example of operation waveforms of this “00” program data latchprocess operation. FIG. 44 represents a detailed operation of a “10”program data latch process operation by the multi-power supply method,and FIG. 50 indicates an example of operation waveforms of this “10”program data latch process operation. Also, FIG. 45 shows a detailedoperation of a “00” erratic detection data latch process operation bythe multi-power supply method, and FIG. 51 shows an example of operationwaveforms of this “00” erratic detection data latch process operation.FIG. 46 shows a detailed operation of a “10” erratic detection datalatch process operation by the multi-power supply method, and FIG. 52shows an example of operation waveforms of this “10” erratic detectiondata latch process operation. FIG. 47 represents a detailed operation ofa “11” disturb detection data latch process operation by the multi-powersupply method, and FIG. 53 indicates an example of operation waveformsof this “11” disturb detection data latch process operation. Preciselyspeaking, although concrete contents of these process operations aredifferent from the concrete content of the data latch process operationshown in FIG. 42, these process operations commonly employ the prechargeoperations and the sense operations. Accordingly, since the contents ofthese process operations may be readily understood, a detaileddescription thereof is omitted.

FIG. 54 represents various voltage conditions with respect to therespective operation modes of the above-explained flash memory. In FIG.54, a voltage of a word line used to read “11” data is 2.4V, a voltageof a word line used to read “10” data is 3.2V, and a voltage of a wordline used to read “00” data is 4.0V. Also, a voltage of a word line usedto program “10” data is 15.1V, a voltage of a word line used to program“00” data is 15.8V, and a voltage of a word line used to program “01”data is 17.0V. Also, a voltage of a word line used to verify “10” datais 2.8V, a voltage of a word line used to verify “00” data is 3.6V, anda voltage of a word line used to verify “01” data is 4.5V. Also, a “11”word disturb detection voltage is 2.1V, a “10” word disturb detectionvoltage is 3.1V, and a “00” word disturb detection voltage is 3.9v.

Retry Function and Recovery Function

As apparent from the flow chart shown in FIG. 16, even when a programingoperation of the above-described flash memory 1 fails, the program dataappearing at this time is saved in the data latch circuits DLL and DLR.When the flash memory 1 receives a retry program command after thefailure programing operation is accomplished, the program data which hasbeen saved in the data latch circuits DLL and DLR can be written at anaddress supplied in combination with this retry program command. Inother words, as indicated in a flow chart of FIG. 55, when a retryprogram command (10H) is entered into the flash memory 1 (step S30), asector address is subsequently entered (steps S31 and S32). Then, theprogram data which has been latched in the data latch circuits DLL andDLR is written at the entered sector address (word line address). Thisdata programing operation is carried out within the flash memory 1 (stepS33).

Also, the above-described flash memory 1 has conducted the reprogramprocess operation to another flash memory as the reprograming operationafter the programing operation failed. That is to say, as indicated in aflow chart of FIG. 56, after the programing operation has failed, whenthe flash memory 1 receives a recovery read command (01H) (step S40),the program data saved in the data latch circuits DLL and DLR can beoutputted via the output buffer 15 and the multiplexer 7 to theinput/output terminals I/O0 to I/O7 (step S41).

FIG. 57 indicates a transition state of internal operations in the flashmemory having the above-explained retry function and recovery function.When the power supply is turned ON, the flash memory is brought into adeep standby condition, and when a reset signal is negated, this flashmemory is brought into a standby condition. When the flash memory istransferred from the standby condition to a chip select condition, thisflash memory is brought into an output disable condition, so that theflash memory is operable in response to a command input. The commandresponding operations are mainly classified into a read setup, a sectorerase setup, and a program setup. When an error happens to occur in theerase setup, or the program setup, this flash memory can accept arecovery read setup command and a retry program setup command.

FIG. 58 schematically represents an example of a memory card withemployment of the above-described flash memory 1. A memory card 200shown in this drawing is constituted by that a local memory 201, amemory controller 202, a buffer memory 203, and an external interfacecircuit 204 are packaged on a card board. A large number of theabove-explained flash memories 1 are packaged on this local memory 200.The memory controller 202 contains a control signal controller 210, anaddress controller 211, and a data I/O controller 212. The controlsignal controller 210 produces an access control signal of the flashmemory 1 and also an access control signal of the buffer memory 203. Theaddress controller 211 performs a chip selection control with respect tothe flash memory 1 and the buffer memory 203. The data I/O controller212 interface-controls data, a command, and an address with respect tothe flash memory 1 and the buffer memory 203. The external interfacecircuit 204 owns such a structure standardized to, for instance, the PCcard interface.

In FIG. 59, there is shown an example of a data processing system withemployment of the above-explained flash memory 1. This data processingsystem of FIG. 59 owns the following different point, as compared withthat of FIG. 58. The above-explained memory controller 202 is arrangedas one peripheral circuit to a control bus CBUS, an address bus ABUS,and a data bus DBUS, to which either a CPU or a microprocessor 230 isconnected, similar to a ROM 231 and a RAM 232.

Since the flash memory 1 owns the above-explained retry function, eitherthe memory controller 210 or the microprocessor 230, which controls theaccess operation to this flash memory 1, can readily perform thereprograming operation by changing either a program address or a sectoraddress with respect to another flash memory in which a programingoperation has failed.

Also, the control apparatus can readily perform the reprogramingoperation with respect to another flash memory other than such a flashmemory that a programing operation has failed even when this controlapparatus need not store thereinto the program data. This controlapparatus access-controls either a memory controller of a memory card orthis memory card constituted by a plurality of flash memories due tothis recovery function.

FIG. 60 indicates a conceptional diagram of the above-explained retryfunction and also of the above-described recovery function. For example,as shown in FIG. 60(A), both the program data and the sector address aresupplied from the buffer memory 203 to the flash memory 1 under controlof the memory controller 202. As a consequence, the flash memory 1executes such an operation for programing the data at the suppliedsector address. When an error happens to occur in this programingoperation, the flash memory 1 sets an error flag to the control register180. As shown in FIG. 60(B), the error flag is transferred via thememory controller 202 to the microprocessor 230 and the like. As aresult, as represented in FIG. 60(C), when a recovery command isoutputted from the memory controller 202 to the flash memory 1, theflash memory 1 outputs the program data latched by the data latchcircuits DLL and DLR as indicated in FIG. 60(D). Also, as shown in FIG.60(E), when the memory controller 202 supplies both a retry programcommand and a sector address to the flash memory 1, as indicated in FIG.60(F), the flash memory 1 executes the programing operation in such amanner that the program data already latched to the data latch circuitsDLL and DLR is written into a newly designated sector address.

Reprogram Function

A reprograming operation may be realized by that after data is erased byreceiving an erase command, data is written by receiving a programcommand. In accordance with FIG. 3, after the erase command isperformed, a program command is executed. The flash memory 1 may realizesuch a reprograming process operation by using a single command, namelya reprogram command.

FIG. 61 is a flow chart for explaining an example of a process operationby receiving a reprogram command. That is, when a first reprogramcommand is supplied (step S60), a sector address to be rewritten isfetched (step S61), and then data at the fetched sector address is readto be latched into the data latch circuits DLL and DLR (step S62).Thereafter, the program data is acquired to the data latch circuits DLLand DLR (step S63). After a second reprogram command is supplied (stepS64), the data of the sector designated by the above-explained reprogramsector address is erased (step S65). Next, a programing operation of thedesignated sector is carried out by employing the data saved in the datalatch circuits DLL and DLR (step S66). This programing operation of thedesignated sector is the same as that as explained in FIG. 16. Whileusing this reprogram command, namely a single command, all of the datastored in the sector can be rewritten.

Alternatively, data stored in a portion of one sector may be rewrittenby using a single command. That is, as indicated in FIG. 62, when afirst reprogram command is supplied (step S70), a sector address to berewritten is fetched (step S71), and data is saved from a memory cell ofthe acquired sector address into the data latch circuits DLL and DLR(step S72). Thereafter, such data which are continuously required from ahead Y address YA(o) of the sector up to a Y address YA(k) are latchedinto the data latch circuits DLL and DLR (step S73). Furthermore, ifnecessary, such a Y address YA(m) where k<m is acquired (step S74), andsuch data which are continuously required from the acquired Y addressYA(m) up to a Y address YA(m+1) are latched into the data latch circuitsDLL and DLR (step S75). When a second reprogram command is supplied(step S76), the data of the sector designated by the above-explainedreprogram sector address is erased. Next, a programing operation of thedesignated sector is carried out based upon the data latched in the datalatch circuits DLL and DLR (step S78). This programing operation of thedesignated sector is the same as that as explained in FIG. 16.

Alternatively, data stored in a portion of one sector may be rewrittenin accordance with a flow chart as indicated in FIG. 63. That is, when afirst reprogram command is supplied (step S80), a sector address to berewritten is fetched (step S81), and data is saved from a memory cell ofthe acquired sector address into the data latch circuits DLL and DLR(step S82). Thereafter, a head Y address YA(m) of the sector is fetched(step S83), and such data which are continuously required from the headY address YA(m) of the sector up to a Y address YA(m+k) are latched intothe data latch circuits DLL and DLR (step S84). Furthermore, ifnecessary, such a Y address YA(n) where m+k<n is acquired (step S85),and such data which are continuously required from the acquired Yaddress YA(n) up to a Y address YA(n+1) are latched into the data latchcircuits DLL and DLR (step S86). It should be understood that theabove-explained process operations defined at the steps S85 and S86 maybe repeatedly performed plural times, if required. When a secondreprogram command is supplied (step S87), the data of the sectordesignated by the above-described reprogram sector address is erased(step S88). Next, a programing operation of the designated sector iscarried out by employing the data saved in the data latch circuits DLLand DLR (step S89). This programing operation of the designated sectoris the same as that as explained in FIG. 16.

Partial Erasing Function

In the case that the flash memory 1 is utilized as a file memory, amanagement area may be allocated to a sector, and the remaining portionmay be opened as a user area. For example, such information as reprogramtimes and good/fail sectors is stored into the management area, and alsowhen a management area is erased in unit of a sector by a user, acommand capable of automatically bringing a management area out oferasing is supported. This may cause the flash memory 1, and moreoverthe file memory to be readily used. In view of this technical point, theflash memory 1 may support the above-described partial erasing command.In other words, in the flow chart of FIG. 64 for indicating the partialerasing function, when a first partial erasing command is supplied (stepS90), a sector address is acquired (step S91). Subsequently, when asecond partial erasing command is supplied (step S92), data of apredetermined area (for example, management area) within a sectordesignated by said sector address is saved in the data latch circuitsDLL and DLR corresponding to this predetermined area, and also data forinstructing an erasing state is set to data latch circuits DLL and DLRcorresponding to other areas within this sector (step S93). As a result,the read data is saved into the data latch circuits DLL and DLRcorresponding to the management area of the designated sector, whereas“11” data corresponding to the erasing state is set to the data latchcircuits DLL and DLR corresponding to other areas of this sector. Then,after the data for the sector designated by the sector address iserased, a programing operation is carried out based upon the data set tothe data latch circuits DLL and DLR (step S94). It should also be notedthat the programing operation of the designated sector is identical tothe programing operation as explained with reference to FIG. 16.

FIG. 65 and FIG. 66 schematically show a detailed overall operation ofthe above-described “designated sector data reading” operation definedat the step S93. The process operation indicated in FIG. 66 succeeds tothe process operation shown in FIG. 65. In FIG. 65 and FIG. 66, numeral“1” implies such a case that a potential at a corresponding node ishigh, and numeral “0” implies such a case that a potential at acorresponding node is low. The process operations shown in FIG. 65 andFIG. 66 are performed in such an assumption that a right-sided memorymat is an operation selected memory mat. FIG. 67 indicates relationshipbetween word line selection levels VRW1, VRW2, VRW3 and a thresholdvoltage distribution. These word line selection levels are used to readdata at a designated sector.

At a step 1 of FIG. 65, while the word line level is selected to beVRW1, data stored in a memory cell of a designated sector is read, andthen the read data is latched to the sense latch circuit SL. At a step2, data of a right-sided node of the sense latch circuit SL isinternally transferred to the data latch circuit DLR. At a step 3, whilethe word line level is selected to be VRW2, data stored in a memory cellof a designated sector is read, and the read data is latched to thesense latch circuit SL. Then, at a step 3.5, data “0” is set to aright-sided input/output node of a sense latch circuit SL except for amanagement area selected by a Y address decoder. Then, at a step 4, dataof a left-sided node of the sense latch circuit SL is internallytransferred to the data latch circuit DLL. As a consequence, only aportion of the required read data can be saved in the data latch circuitDLL.

At a step 5, while the word line level is selected to be VRW3, datastored in a memory cell of a designated sector is read, and the readdata is latched to the sense latch circuit SL. Then, at a step 5.5, data“1” is set to the right-sided input/output node of the sense latchcircuit SL except for the management area selected by the Y addressdecoder. Then, at a step 6, the data latched by the data latch circuitDLR is internally transferred via the transistor M28R to the bit lineG-BLR. Then, at a step 7, a right-sided bit line G-BLR corresponding tothe sense latch circuit SL in which the data “1” is set to theright-sided input/output node SLR is controlled to a low level. At astep 8, the data is transferred from the sense latch circuit SL to thedata latch circuit DLR. As a result, the 4-value information of the readdata of the designated sector is stored in the data latch circuits DLLand DLR of the management area, and data indicative of an erasingcondition is stored in the data latch circuits DLL and DLR correspondingto another area (namely, memory area) of the designated sector.

In accordance with the above-described flash memory, memory card, anddata processing system, the below-mentioned effects can be achieved:

-   [1] The externally supplied program data is latched into the data    latch-circuits DLL and DLR, and a judgment is carried out as to    whether or not the latched program data corresponds to which    threshold value of the multi-levels every time the programing    operation of the plural stages is performed. Then, the program    information corresponding to this judgment result is latched into    the sense latch circuit SL. In response to the program information    latched in the sense latch circuit SL, the programing operation for    setting the threshold voltages of the multi-levels to the memory    cell is carried out in a stepwise manner. As a consequence, even    when the programing operation is accomplished, the program data    which has been originally and externally supplied is left in the    data latch circuits DLL and DLR. Accordingly, even when the    programing operation of the multi-levels information with respect to    the memory cell MC based upon the detection result of the word    disturb detecting operation, or the detector result of the erratic    detecting operation is again carried out, the program data is no    longer again accepted from the external devices.-   [2] Even when the programing operation fails, sine the program data    at this time is saved in the data latch circuits DLL and DLR within    the flash memory, in the case that the retry program command is    accepted after the failure programing operation has been    accomplished, the program data already saved in the data latch    circuits can be written to the address supplied in connection with    this retry program command. Since the flash memory owns such a retry    function, the memory controller for access-controlling this flash    memory changes either the program address or the sector address with    respect to the semiconductor device in which the programing    operation has failed, so that the memory controller can readily    perform the reprograming operation.-   [3] When the flash memory receives the recovery read command after    the programing operation has failed, this flash memory outputs the    program data saved in the data latch circuits DLL and DLR to the    external device. Due to this recovery function, the control    apparatus can readily reprogram the same data into another flash    memory other than such a flash memory where the programing operation    has failed. This control apparatus access-controls either the memory    controller of the memory card, or the memory card constituted by the    plurality of semiconductor devices.-   [4] When the first reprogram command is supplied, the reprogram    address is fetched, and also the program data is fetched by the data    latch circuit. After the second reprogram command is supplied, the    area designated by the reprogram address is erased. Subsequently,    the programing operation is controlled based upon the data saved in    the data latch circuits. As a result, all of the data in a sector    can be rewritten by way of a single command.-   [5] Since the partial erasing command is supported, the management    area of the sector can be automatically derived from the area to the    erased.

While the present invention by the inventors has been described withreference to the various preferred embodiments in detail, the presentinvention is not limited to these embodiments, but may be apparentlymodified, changed, or substituted without departing from the technicalspirit and scope of the invention.

For example, the information saved in a single memory cell is notlimited to 4 values, but may be more values. In such an example casethat 8 values are saved in a single memory cell, a total number of datalatch circuits connected to bit lines may be furthermore increased. Thecalculation method for the data latch process operation is not limitedto the above-explained calculation method, but may be properly changed.Furthermore, a total number of memory mats, the programing voltagecondition, the erasing voltage condition, and the verify voltagecondition may be properly changed. Also, both the erasing state and theprograming state may be defined based upon the definition opposite tothe above-explained definition. Also, the semiconductor device accordingto the present invention is not limited to the memory chip such as theflash memory, but also may be widely applied to a data processingsemiconductor device, or a logic operation semiconductor device such asa flash memory built-in type microcomputer. Furthermore, the presentinvention may be applied to an EEPROM.

The advantages achieved by the typical disclosed invention will now besimply explained as follows:

That is to say, the program data does not disappear even during theprograming operation, and this program data is externally supplied tothe data latch circuits in order to program the information having themulti-levels into each of the memory cells. As a consequence, even whenthe programing operation is accomplished, the originally and externallysupplied program data is left in the data latch circuits. As aconsequence, even when the programing operation of the multi-levelinformation is retried with respect to the memory cell, the program datais no longer again received from the external circuit based on the worddisturb detection result, or the erratic detection result.

Also, in such a case that the programing operation of the multi-levelinformation is again carried out with resect to the memory cell, theprogram data need not be again received from the external circuit.

When the programing operation has failed, the program data which hasbeen internally saved at this failure end can be rewritten bydesignating another memory address.

Also, when the programing operation has failed, the program dataobtained at this failure end can be outputted outside the flash memory.

1. A command format for a nonvolatile memory, comprising: a firstcommand format; a second command format; and a third command format,wherein said first command format comprises a first type command, andaddress information after said first type command, wherein said secondcommand format comprises said first type command, said addressinformation, and a second type command, said address information beinglocated between said first type command and said second type command,wherein said third command format comprises said first type command,said address information, data and said second type command, saidaddress information being located between said first type command andsaid second type command, and said data being located between saidaddress information and said second type command, wherein said firsttype command indicates an arbitrary one of operations, and wherein allof said first type command, said second type command, said addressinformation and said data are received into an input/output terminal ofsaid nonvolatile memory.
 2. A nonvolatile memory comprising: a pluralityof input/output terminals; and a control circuit, wherein said controlcircuit is capable of receiving an arbitrary one of a plurality ofcommands via said plurality of input/output terminals, wherein saidplurality of commands comprise a first type format command, a secondtype format command, and a third type format command, wherein said firsttype format command includes a first type command without a second typecommand, and address information after said first type command, whereinsaid second type format command includes said first type command, saidsecond type command after said first type command, and said addressinformation located between said first type command and said second typecommand, wherein said third type format command includes said first typecommand, said second type command after said first type command, saidaddress information located between said first type command and saidsecond type command, and data located between said address informationand said second type command, wherein said first type command indicatesan arbitrary one of operations, and wherein said second type commandindicates a termination of each of said second type format command andsaid third type format command.
 3. A nonvolatile memory according toclaim 2, wherein said first type format command includes a first readcommand, a first write command and an erase command, and wherein saidsecond type format command includes a second write command.
 4. Anonvolatile memory according to claim 3, further comprising anonvolatile memory array and a latch circuit.
 5. A nonvolatile memoryaccording to claim 4, wherein said control circuit controls outputtingdata read out from said nonvolatile memory array according to saidaddress information when receiving said first read command.
 6. Anonvolatile memory according to claim 4 wherein said control circuitcontrols writing data stored in said latch circuit to said nonvolatilememory array according to said address information when receiving saidfirst write command.
 7. A nonvolatile memory according to claim 4wherein said control circuit controls erasing data stored in saidnonvolatile memory array according to said address information whenreceiving said erase command.
 8. A nonvolatile memory according to claim4 wherein said control circuit controls writing data received fromoutside to said nonvolatile memory array according to said addressinformation when receiving said second write command.